35N03 datasheet(1/5 Pages) FS

Part #	35N03

Description	N-Channel Power MOSFET

PDF	5 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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SEMICONDUCTOR

TECHNICAL DATA

FTK35N03PDFN33

2015. 7. 18

1/5

Revision No : 0

PDFN3.3×3.3-8L

N-Channel Power MOSFET

DESCRIPTION

The FTK35N03PDFN33 uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be used in a

wide variety of applications

FEATURES



High density cell design for ultra low RDS(ON)



Fully characterized avalanche voltage and

current



Good stability and uniformity with high EAS



Excellent package for good heat dissipation



Special process technology for high ESD

capability

APPLICATIONS



High side switch in POL DC/DC converter



Secondary side synchronous rectifier

MARKING

EQUIVALENT CIRCUIT

35N03 = Part No.

Solid dot=Pin1 indicator

XXX=Date Code

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

(1)

35

A

Pulsed Drain Current

IDM

120

A

Single Pulsed Avalanche Energy

EAS

(2)

150

mJ

Power Dissipation

PD

1.5

W

Thermal Resistance from Junction to Ambient

RθJA

(1)

83.3

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature Range

Tstg

-55 ~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

TL

260

℃

(1).

Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

(2).EAS condition: VDD=15V,L=0.1mH, RG=25

Ω, Starting TJ = 25°C

G

1

2

3

5

6

7

8

S

D

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