35N03 datasheet(2/5 Pages) FS

2 / 5 page

2015. 7. 18

2/5

Revision No : 0

FTK35N03PDFN33

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR) DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =30V, VGS =0V

µA

Gate-body leakage current

IGSS

VDS =0V, VGS =±20V

±100

On characteristics (note1)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =250µA

1.0

1.6

3.0

VGS =4.5V, ID =10A

8.2

9.5

mΩ

Static drain-source on-sate resistance

RDS(on)

VGS =10V, ID =12A

4.8

5.5

mΩ

Forward transconductance

gFS

VDS =10V, ID =12A

Dynamic characteristics (note 2)

Input capacitance

Ciss

1265

Output capacitance

Coss

600

Reverse transfer capacitance

Crss

VDS =15V,VGS =0V,

f =1MHz

130

Switching characteristics (note 2)

Total gate charge

Gate-source charge

Qgs

2.7

Gate-drain charge

Qgd

VDS=15V, VGS=10V,

ID=12A

2.5

Turn-on delay time

td(on)

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

VDD=15V,ID=12A,

VGS=10V,RG=6Ω

Drain-Source Diode Characteristics

Drain-source diode forward voltage

(note1)

VSD

VGS =0V, IS=12A

0.85

1.2

Continuous drain-source diode forward

current

(note3)

Pulsed drain-source diode forward current

ISM

120

Notes:

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

Guaranteed by design, not subject to production.

Surface Mounted on FR4 Board, t ≤ 10 sec.

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