VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC8150

2.488Gb/s SONET/SDH

Overhead Monitor

Page 12

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

10/12/98

G52186-0, Rev. 3.0

DC Characteristics

Table 10: High-Speed Differential ECL Inputs and Outputs (HSECL)

Note: HSECL inputs are NOT terminated on chip (high impedance inputs).

Table 11: TTL Inputs and Outputs

Parameter

Description

Min

Typ

Max

Units

Conditions

V

OD

Output differential voltage

(Peak to Peak, Single-ended)

550

-

1200

mV

Load = 100 Ohms

across RXSLBOUT+/–

at receiver

V

OCM

Output common-mode

voltage

2100

-

3000

mV

Load = 100 Ohms

across RXSLBOUT+/–

at receiver

Output Rise / Fall

-

100

-

ps

—

R

O

Output Impedance

40

-

60

ohms

—

V

ID

Input differential voltage

200

-

mV

AC Coupled, internally

biased to VCC/2

Parameter

Description

Min

Typ

Max

Units

Conditions

V

OH

Output HIGH voltage

2.4

-

-

V

V

OL

Output LOW voltage

0

-

0.4

V

V

IH

Input HIGH voltage

2.0

-

VCC +

1.0V

V—

V

IL

Input LOW voltage

0

-

0.8

V

—

Input HIGH current

-

-

500

uA

Input LOW current

-50

-

-

uA

Parameter

Description

(Max)

Units

850

mA

Power dissipation

2.95

W

Parameter

Description

(Max)

Units

420

mA

430

mA

Power dissipation

2.35

W