ATMEGA640 datasheet(333/436 Pages) MICROCHIP

333 / 436 page

333

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

DS40002211A

Figure 30-2. Addressing the Flash Which is Organized in Pages(1)

Note:

1. PCPAGE and PCWORD are listed in Table 30-7 on page 328.

Figure 30-3. Programming the Flash Waveforms(1)

Note:

1. “XX” is don’t care. The letters refer to the programming description above.

30.7.5

Programming the EEPROM

The EEPROM is organized in pages, see Table 30-8 on page 328. When programming the EEPROM, the program

data is latched into a page buffer. This allows one page of data to be programmed simultaneously. The program-

ming algorithm for the EEPROM data memory is as follows (refer to “Programming the Flash” on page 331 for

details on Command, Address and Data loading):

1. A: Load Command “0001 0001”.

2. G: Load Address High Byte (0x00 - 0xFF).

3. B: Load Address Low Byte (0x00 - 0xFF).

4. C: Load Data (0x00 - 0xFF).

5. E: Latch data (give PAGEL a positive pulse).

K: Repeat 3 through 5 until the entire buffer is filled.

L: Program EEPROM page.

PROGRAM MEMORY

WORD ADDRESS

WITHIN A PAGE

PAGE ADDRESS

WITHIN THE FLASH

INSTRUCTION WORD

PAGE

PCWORD[PAGEMSB:0]:

PAGEEND

PAGE

PCWORD

PCPAGE

PCMSB

PAGEMSB

PROGRAM

COUNTER

RDY/BSY

RESET +12V

PAGEL

BS2

0x10

ADDR. LOW

ADDR. HIGH

DATA

DATA LOW

DATA HIGH

ADDR. LOW

DATA LOW

DATA HIGH

XA1

XA0

BS1

XTAL1

ADDR. EXT.H

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