FUSB251 datasheet(6/19 Pages) ONSEMI

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FUSB251

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ELECTRICAL SPECIFICATION TABLE Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical

values are at TA = 25°C and VDD = 3.8 V unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Quiescent supply current

VDD = 2.7 to 5.5 V, Switch is closed,

no load, moisture detection is not

enabled

IMOS

Current with moisture detection enabled

VDD = 2.7 to 5.5 V, Switch is closed,

CC toggle and CC moisture

detection is enabled, Avg for 1 sec

IDRY

Current consumption when Dry check is

working on

VDD = 2.7 to 5.5 V,

Moisture detected, and Dry check

enabled, T(PD, period) = 4 sec

IOFF

Power off leakage current

VDD = 0 V, Except CC1/CC2

VUVLO

Under voltage Lockout

VDD Rising, VDD Falling

2.45 (Rising),

2.40 (Falling)

2.55 (Rising)

TSD

Thermal Shut down

Shutdown Threshold/ Return from

Shutdown/ Hysteresis

150°C

(shutdown),

130°C (Return),

20°C (Hysteresis)

ICC_LEAK

CC ON leakage current

VDD = 2.7 to 5.5 V, CC Switch

closed, CCx_H float, measure

leakage from CCx with 3.3 V

0.5

RON_CC

CC1, CC2 RON resistance

VDD = 2.7 to 5.5 V, IOUT = 200 mA

300

RFlatness_CC

VDD = 2.7 to 5.5 V,

Vcc swing = 0 V − 1.2 V

VOVP_CC

CC over voltage protection threshold

VDD = 2.7 to 5.5 V, VCC rising

5.70

5.85

6.00

VOVP_CC_FALL

CC recover threshold when voltage on

CC is falling

VDD = 2.7 V to 5.5 V

5.70

VOV_HYS_CC

CC OVP threshold Hysteresis

VDD = 2.7 to 5.5 V

0.15

tCC_OVP

CC OVP Trip time (Note 1)

VDD = 2.7 to 5.5 V, CCx rise from 4

V to 6 V with 1 V/ns slew rate,

RL = 30 W on CCx_H

250

Rd_CC

Dead battery pull down resistance

VDD = 0 to UVLO, Dead battery

resistance / Voltage on pin

4.1

5.1

6.1

VOVP_SBU

SBU over voltage threshold

VDD = 2.7 to 5.5 V, SBU Rising

4.4

4.5

4.7

VOVP_SBU_FALL SBU OVP recovery threshold when

voltage on SBU is falling

VDD = 2.7 V to 5.5 V

4.35

VOV_SBU_HYS

SBU OVP Hysteresis

VDD = 2.7 to 5.5 V, Measure

difference between SBUX rising and

falling OVP threshold

0.15

ISBU_ON_LEAK

SBU ON leakage current

VDD = 2.7 to 5.5 V, Switch closed,

SBUx_H floating, measure leakage

@1 V SBU Note (SBU ON leakage spec

is different depending on temperature)

(Note 1)

5 @85°C,

15 @100°C

ISBU_OFF_LEAK

SUB OFF leakage from SBUx

VDD = 2.7 to 5.5 V, Switch open,

Measure leakage current from SBUx

with 0 − VDD

−0.5

0.5

RON_SBU

SBU1, SBU2 Switch ON resistance

VDD = 2.7 to 5.5 V, VSW_SBU

= VDD, ISBU_ON = −8mA

RFlatness_SBU

SBU RON Flatness

VDD = 2.7 to 5.5 V,

VSBU Swing = 0 − VDD

0.1

TOVP_SBU

SBU OVP response time (Note 1)

VDD = 2.7 to 5.5 V, SBUx rise from

4 V to 6 V with 1 V/ns.

RL = 30 W on SBUx_H

0.5

RON_FM

FM to SBU1 or SBU2 ON resistance

VDD = 2.7 to 5.5 V, Close FM to

SBU1 or SBU2 switch, VSW_SBU

= VDD, ISBU_ON = −8 mA

RFlatness_FM

FM to SBU1/SBU2 switch Rflatness

VDD = 2.7 to 5.5 V,

VSBU_Swing = 0 − VDD

0.1

CON_CC

CC Switch ON capacitance (Note 1)

VDD = 2.7 to 5.5 V,

VCC_SW = 0 − 1.2 V, f = 400 kHz

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