IN_, EN_ on Side A to GNDA..................................-0.3V to +6V

IN_, EN_ on Side B to GNDB .................................-0.3V to +6V

Short-Circuit Duration

OUT_ on Side A to GNDA,

OUT_ on Side B to GNDB.....................................Continuous

Narrow SOIC (derate 13.3mW/°C above +70°C) ....1066.7mW

QSOP (derate 9.6mW/°C above +70°C).................... 771.5mW

Operating Temperature Range......................... -40°C to +125°C

Maximum Junction Temperature .....................................+150°C

Storage Temperature Range............................ -60°C to +150°C

Soldering Temperature (reflow).......................................+260°C

MAX14430–MAX14432

Four-Channel, Fast, Low-Power,

www.maximintegrated.com

Maxim Integrated │ 2

Absolute Maximum Ratings

Package Information

PACKAGE TYPE: 16 NARROW SOIC

Package Code

S16MS+12

Outline Number

21-0041

Land Pattern Number

90-0442

THERMAL RESISTANCE, FOUR-LAYER BOARD

75°C/W

24°C/W

PACKAGE TYPE: 16 QSOP

Package Code

E16MS+1F

Outline Number

21-0055

Land Pattern Number

90-0167

THERMAL RESISTANCE, FOUR-LAYER BOARD

103.7°C/W

37°C/W

Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For

detailed information on package thermal considerations, refer to

www.maximintegrated.com/thermal-tutorial.

For the latest package outline information and land patterns (footprints), go to

www.maximintegrated.com/packages. Note that a “+”,

“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing

pertains to the package regardless of RoHS status.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these

or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.