MM9Z1 datasheet(39/452 Pages) NXP

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NXP Semiconductors

MM9Z1_638

ELECTRICAL CHARACTERISTICS

Table 49. Electromagnetic compatibility

Ratings

Symbol

Value / limit

Unit

ESD - Human Body Model (HBM) following AEC-Q100 / JESD22-A114

(CZAP = 100 pF, RZAP = 1500 Ω)

• LIN (all GNDs shorted)

• All other Pins

VHBM

±8.0

±2.0

ESD - Charged Device Model (CDM) following AEC-Q100

• Corner Pins

• All other Pins

VCDM

±750

±500

ESD - Machine Model (MM) following AEC-Q100 (CZAP = 200 pF, RZAP = 0 Ω), All Pins

VMM

±200

Latch-up current at TA = 125 °C(68)

ILAT

±100

ESD GUN - LIN Conformance Test Specification(69), unpowered, contact discharge. (CZAP=

150 pF, RZAP = 330 Ω);

LIN (no bus filter CBUS)

Vsup with Cvsup capacitors (4.7 µF and 100 nF)

Vsense[3..0] with serial 2.2 k

PTB4 with serial 47 k

Ω and 2.2 nF (external wake-up configuration)

PTB[4..0] with serial 2.2 k

Ω and 2.2 nF to gnd (external Tsense configuration)

VDDA with 100 k

Ω and 47 nF to gnd

PTB5 with serial 1.0 k

Ω, 2.2 nF and 5.1 V zener diode

± 8.0

ESD GUN - IEC 61000-4-2 Test Specification(70), unpowered, contact discharge. (CZAP=

150 pF, RZAP = 330 Ω);

LIN (no bus filter CBUS)

Vsup with Cvsup capacitors (4.7 µF and 100 nF)

Vsense[3..0] with serial 2.2 k

PTB4 with serial 47 k

Ω and 2.2 nF (external wake-up configuration)

PTB[4..0] with serial 2.2 k

Ω and 2.2 nF to gnd (external Tsense configuration)

VDDA with 100 k

Ω and 47 nF to gnd

PTB5 with serial 1.0 k

Ω, 2.2 nF and 5.1 V zener diode

± 8.0

ESD GUN - ISO10605(70), unpowered, contact discharge, CZAP= 150 pF,

RZAP = 2.0 kΩ;

LIN (no bus filter CBUS)

Vsup with Cvsup capacitors (4.7 µF and 100 nF)

Vsense[3..0] with serial 2.2 k

PTB4 with serial 47 k

Ω and 2.2 nF (external wake-up configuration)

PTB[4..0] with serial 2.2 k

Ω and 2.2 nF to gnd (external Tsense configuration)

VDDA with 100 k

Ω and 47 nF to gnd

PTB5 with serial 1.0 k

Ω, 2.2 nF and 5.1 V zener diode

± 8.0

ESD GUN - ISO10605(70), powered, contact discharge, CZAP= 330 pF, RZAP = 2.0 kΩ;

LIN (with bus filter CBUS 220 pF)

Vsup with Cvsup capacitors (4.7 µF and 100 nF)

Vsense[3..0] with serial 2.2 k

PTB4 with serial 47 k

Ω and 2.2 nF (external wake-up configuration)

PTB[4..0] with serial 2.2 k

Ω and 2.2 nF to gnd (external Tsense configuration)

VDDA with 100 k

Ω and 47 nF to gnd

PTB5 with serial 1k.0

Ω, 2.2 nF and 5.1 V zener diode

± 8.0

Notes:

68.Input Voltage Limit = -2.5 to 7.5 V

69.Tested internally. Certification pending.

70.Tested internally only, following the reference document test procedure.

MM9Z1 Datasheet(PDF) 39 Page - NXP Semiconductors

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