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LTC4213 Datasheet(PDF) 14 Page - Analog Devices

Part # LTC4213
Description  No RSENSE??Electronic Circuit Breaker
PDF  22 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4213 Datasheet(HTML) 14 Page - Analog Devices

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LTC4213
14
Rev. A
For more information www.analog.com
Operating temperature of 0° to 70°C.
RDS(ON) at 25°C = 100%
RDS(ON) at 0°C = 90%
RDS(ON) at 70°C = 120%
MOSFET resistance variation:
RDS(ON)(NOM) = 15m • 0.82 = 12.3mΩ
RDS(ON)(MAX) = 15m • 1.333 • 0.93 • 1.2 = 15m • 1.488
= 22.3mΩ
RDS(ON)(MIN) = 15m • 0.667 • 0.80 • 0.90 = 15m • 0.480
= 7.2mΩ
VCB variation:
NOM VCB = 25mV = 100%
MIN VCB = 22.5mV = 90%
MAX VCB = 27.5mV = 110%
The current limits are:
ILIMIT(NOM) = 25mV/12.3mΩ = 2.03A
ILIMIT(MIN) = 22.5mV/22.3mΩ = 1.01A
ILIMIT(MAX) = 27.5mV/7.2mΩ = 3.82A
For proper operation, the minimum current limit must
exceed the circuit maximum operating load current with
margin. So this system is suitable for operating load cur-
rent up to 1A. From this calculation, we can start with the
general rule for MOSFET RDS(ON) by assuming maximum
operating load current is roughly half of the ILIMIT(NOM).
Equation 7 shows the rule of thumb.
IOPMAX =
VCB(NOM)
2 •RDS(ON)(NOM)
(7)
Note that the RDS(ON)(NOM) is at the LTC4213 nominal
operating ∆VGSMAX rather than at typical vendor spec.
Table  1 gives the nominal operating ∆VGSMAX at the
various operating VCC. From this table users can refer to
the MOSFET’s data sheet to obtain the RDS(ON)(NOM) value.
Table 1. Nominal Operating ∆VGSMAX for Typical Bias
Supply Voltage
VCC (V)
∆VGSMAX (V)
2.3
4.3
2.5
5.0
2.7
5.6
3.0
6.5
3.3
7.0
5.0
7.0
6.0
7.0
Load Supply Power-Up after Circuit Breaker Armed
Figure 4 shows a normal power-up sequence for the circuit
in Figure 1 where the VIN load supply power-up after circuit
breaker is armed. VCC is first powered up by an auxiliary
bias supply. VCC rises above 2.07V at time point 1. VON
exceeds 0.8V at time point 2. After a 60µs debounce delay,
the GATE pin starts ramping up at time point 3. The external
MOSFET starts conducting at time point 4. At time point 5,
VGATE exceed ∆VGSARM and the circuit breaker is armed.
After 50µs (tREADY delay), READY pulls high by an external
resistor at time point 6. READY signals the VIN load supply
module to start its ramp. The load supply begins soft-start
ramp at time point 7. The load supply ramp rate must be
slow to prevent circuit breaker tripping as in Equation 8.
ΔVIN
Δt
<
IOPMAX −ILOAD
CLOAD
(8)
Where IOPMAX is the maximum operating current defined
by Equation 7.
For illustration, VCB = 25mV and RDS(ON) = 3.5mΩ at the
nominal operating ∆VGSMAX. The maximum operating
current is 3.5A (refer to Equation 7). Assuming the load
can draw a current of 2A at power-up, there is a margin
of 1.5A available for CLOAD of 100µF and VIN ramp rate
should be <15V/ms. At time point 8, the current through
the MOSFET reduces after CLOAD is fully charged.
APPLICATIONS INFORMATION



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