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LTC4213 Datasheet(PDF) 3 Page - Analog Devices |
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LTC4213 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 22 page  LTC4213 3 Rev. A For more information www.analog.com SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ISENSEN SENSEN Input Current VSENSEP = VSENSEN = 5V, Normal Mode 15 40 80 µA VSENSEP = VSENSEN = 0, Normal Mode –1 ±15 µA VSENSEP = VSENSEN = 5V, Reset Mode or Fault Mode 50 280 µA VCB Circuit Breaker Trip Voltage VCB = VSENSEP – VSENSEN ISEL = 0, VSENSEP = VCC l 22.5 25 27.5 mV ISEL = Floated, VSENSEP = VCC l 45 50 55 mV ISEL = VCC, VSENSEP = VCC l 90 100 110 mV VCB(FAST) Fast Circuit Breaker Trip Voltage VCB(FAST) = VSENSEP – VSENSEN ISEL = 0, VSENSEP = VCC l 63 100 115 mV ISEL = Floated, VSENSEP = VCC l 126 175 200 mV ISEL = VCC, VSENSEP = VCC l 252 325 371 mV IGATE(UP) GATE Pin Pull Up Current VGATE = 0V l –50 –100 –150 µA IGATE(DN) GATE Pin Pull Down Current ∆VSENSEP – VSENSEN = 200mV, VGATE = 8V l 10 40 mA ∆VGSMAX External N-Channel Gate Drive VSENSEN = 0, VCC ≥ 2.97V, IGATE = –1µA l 4.8 6.5 8 V VSENSEN = 0, VCC = 2.3V, IGATE = –1µA l 2.65 4.3 8 V ∆VGSARM VGS Voltage to Arm Circuit Breaker VSENSEN = 0, VCC ≥ 2.97V l 4.4 5.4 7.6 V VSENSEN = 0, VCC = 2.3V l 2.5 3.5 7 V ∆VGSMAX – ∆VGSARM Difference Between ∆VGSMAX and ∆VGSARM VSENSEN = 0, VCC ≥ 2.97V l 0.3 1.1 V VSENSEN = 0, VCC = 2.3V l 0.15 0.8 V VREADY(OL) READY Pin Output Low Voltage IREADY = 1.6mA, Pull-Down Device On l 0.2 0.4 V IREADY(LEAK) READY Pin Leakage Current VREADY = 5V, Pull-Down Device Off l 0 ±1 µA VON(TH) ON Pin High Threshold ON Rising, GATE Pulls Up l 0.76 0.8 0.84 V ∆VON(HYST) ON Pin Hysteresis ON Falling, GATE Pulls Down 10 40 90 mV VON(RST) ON Pin Reset Threshold ON Falling, Fault Reset, GATE Pull-Down l 0.36 0.4 0.44 V ION(IN) ON Pin Input Current VON = 1.2V l 0 ±1 µA ∆VOV Overvoltage Threshold, ∆VOV = VSENSEP – VCC l 0.41 0.7 1.1 V tOV Overvoltage Protection Trip Time VSENSEP = VSENSEN = Step 5V to 6.2V 25 65 160 µs tFAULT(SLOW) VCB Trips to GATE Discharging ∆VSENSE Step 0mV to 50mV, VSENSEN Falling, VCC = VSENSEP = 5V l 7 16 27 µs tFAULT(FAST) VCB(FAST) Trips to GATE Discharging ∆VSENSE Step 0V to 0.3V, VSENSEN Falling, VSENSEP = 5V l 1 2.5 µs tDEBOUNCE Startup De-Bounce Time VON = 0V to 2V Step to Gate Rising (Exiting Reset Mode) 27 60 130 µs tREADY READY Delay Time VGATE = 0V to 8V Step to READY Rising, VSENSEP = VSENSEN = 0 22 50 115 µs tOFF Turn-Off Time VON = 2V to 0.6V Step to GATE Discharging 1.5 5 10 µs tON Turn-On Time VON = 0.6V to 2V Step to GATE Rising (Normal Mode) 4 8 16 µs tRESET Reset Time VON Step 2V to 0V 20 80 150 µs Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, ISEL = 0 unless otherwise noted. (Note 2) Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to ground unless otherwise specified. |
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