HCS12COREUG datasheet(86/124 Pages) MOTOROLA

86 / 124 page

MC9S12DT128B Device User Guide — V01.07

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device

specification. Complete DC parametric and functional testing is performed per the applicable device

specification at room temperature followed by hot temperature, unless specified otherwise in the device

specification.

A.1.7 Operating Conditions

This chapter describes the operating conditions of the device. Unless otherwise noted those conditions

apply to all the following data.

NOTE:

Please refer to the temperature rating of the device (C, V, M) with regards to the

ambient temperature TA and the junction temperature TJ. For power dissipation

Table A-2 ESD and Latch-up Test Conditions

Model

Description

Symbol

Value

Unit

Human Body

Series Resistance

1500

Ohm

Storage Capacitance

100

Number of Pulse per pin

positive

negative

–

Machine

Series Resistance

Ohm

Storage Capacitance

200

Number of Pulse per pin

positive

negative

–

Latch-up

Minimum input voltage limit

–2.5

Maximum input voltage limit

7.5

Table A-3 ESD and Latch-Up Protection Characteristics

Num

Rating

Symbol

Min

Max

Unit

C Human Body Model (HBM)

VHBM

2000

–

C Machine Model (MM)

VMM

200

–

C Charge Device Model (CDM)

VCDM

500

–

Latch-up Current at 125

°C

positive

negative

ILAT

+100

–100

–mA

Latch-up Current at 27

°C

positive

negative

ILAT

+200

–200

–mA

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