HCS12COREUG datasheet(99/124 Pages) MOTOROLA

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MC9S12DT128B Device User Guide — V01.07

A.3.2 NVM Reliability

The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process

monitors and burn-in to screen early life failures.

The failure rates for data retention and program/erase cycling are specified at the operating conditions

noted.

The program/erase cycle count on the sector is incremented every time a sector or mass erase event is

executed.

NOTE:

All values shown in Table A-12 are target values and subject to further extensive

characterization

Table A-12 NVM Reliability Characteristics

NOTE:

Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is

specified for 15 years.

NOTE:

EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is

specified for 5 years on words after cycling 10K times. However if only 10 cycles

are executed on a word the data retention is specified for 15 years.

4. Burst Programming operations are not applicable to EEPROM

5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.

6. Minimum time, if first word in the array is not blank

7. Maximum time to complete check on an erased block

Conditions are shown in Table A-4 unless otherwise noted

Num C

Rating

Cycles

Data Retention

Lifetime

Unit

C Flash/EEPROM (-40˚C to +125˚C)

Years

C EEPROM (-40˚C to +125˚C)

10,000

Years

HCS12COREUG Datasheet(PDF) 99 Page - Motorola, Inc