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SMS66 Datasheet(PDF) 6 Page - Summit Microelectronics, Inc. |
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SMS66 Datasheet(HTML) 6 Page - Summit Microelectronics, Inc. |
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6 / 26 page ![]() SMS66 Preliminary Information Summit Microelectronics, Inc 2070 1.0 7/16/03 6 ABSOLUTE MAXIMUM RATINGS Temperature Under Bias ...................... -55 °C to 125°C Storage Temperature............................ -65 °C to 150°C Terminal Voltage with Respect to GND: VDD Supply Voltage ..........................-0.3V to 6.0V 12VIN Supply Voltage......................-0.3V to 15.0V All Others ................................-0.3V to VDD + 0.7V Output Short Circuit Current ............................... 100mA Lead Solder Temperature (10 secs).................... 300 °C Note - The device is not guaranteed to function outside its operating rating. Stresses listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions outside those listed in the operational sections of the specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Devices are ESD sensitive. Handling precautions are recommended. RECOMMENDED OPERATING CONDITIONS Temperature Range (Industrial)...........–40 °C to +85°C (Commercial) ............–5 °C to +70°C VDD Supply Voltage .................................. 2.7V to 5.5V EEPROM Write Supply Voltage 1…….....…3.0V to 5.5V 12VIN Supply Voltage 2 ............................ 8.0V to 15.0V VIN ............................................................ GND to VDD VOUT ...................................................... GND to 15.0V Package Thermal Resistance ( θJA) 48 Lead TQFP……………………………….…80 oC/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 Note 1 – During an EEPROM memory array or Configuration Register Write, the supply voltage minimum is 3.0V. Note 2 – Range depends on internal regulator set to 3.6V or 5.5V. DC OPERATING CHARACTERISTICS (Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.) Symbol Parameter Notes Min. Typ. Max Unit VDD Low Range Supply Voltage Note 1 2.7 5.5 V Note 2. Internally regulated to 5.5V 10 15 V 12VIN High Range Supply Voltage Note 2. Internally regulated to 3.6V 7 14 IDD Power Supply Current from VDD 12VIN floating 3 5 mA I12VIN Power Supply Current from 12VIN VDD floating 3 5 mA PTOV1 Programmable Threshold for OV1 condition 0 4XVREF V PTOV2 Programmable Threshold for OV2 condition 0 4XVREF V PTOV1ACC Programmable UV Threshold Accuracy -0.005 PTUV +0.005 V PTOV2ACC Programmable OV Threshold Accuracy -0.005 PTOV +0.005 V PTUV1 Programmable Threshold for UV1 condition 0 4XVREF V PTUV2 Programmable Threshold for UV2 condition 0 4XVREF V PTUV1ACC Programmable UV1 Threshold Accuracy -0.005 PTUV1 +0.005 V PTUV2ACC Programmable UV2 Threshold Accuracy -0.005 PTUV2 +0.005 V Note 1 – During an EEPROM memory array or Configuration Register Write, the supply voltage minimum is 3.0V. Note 2 – Range depends on internal regulator set to 3.6V or 5.5V. |
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