BLF647P datasheet(3/14 Pages) AMPLEON

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BLF647P#3

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Product data sheet

Rev. 3 — 1 September 2015

3 of 14

BLF647P

Broadband power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF647P is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;

f = 1300 MHz at rated load power.

Table 6.

DC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.1 mA

VGS(th)

gate-source threshold voltage

VDS =28 V; ID = 110 mA

1.55 1.8

2.25 V

IDSS

drain leakage current

VGS =0V; VDS =28V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =20 V

18.1 20

IGSS

gate leakage current

VGS =11 V; VDS =0V

140 nA

gfs

forward transconductance

VDS =20 V; ID = 5500 mA

7.6

RDS(on)

drain-source on-state resistance VGS =VGS(th) +3.75 V;

ID =3.85A

-140



Table 7.

AC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

Ciss

input capacitance

VGS = 0 V; VDS =32V; f=1MHz

Coss

output capacitance

VGS = 0 V; VDS =32V; f=1MHz

Crs

feedback capacitance

VGS = 0 V; VDS =32V; f=1MHz

1.3

Table 8.

RF characteristics

Test signal: CW; f = 1300 MHz; RF performance at VDS =32V; IDq =100 mA; Tcase = 25C; unless

otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 200 W

1718-

D

drain efficiency

PL = 200 W

6670-

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