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BLF647P Datasheet(PDF) 9 Page - Ampleon Netherlands B.V. |
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BLF647P Datasheet(HTML) 9 Page - Ampleon Netherlands B.V. |
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9 / 14 page ![]() BLF647P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 9 of 14 BLF647P Broadband power LDMOS transistor 7.3.3 2-Tone CW VDS = 50 V; IDq = 700 mA; f1 = 1299.95 MHz; f2 = 1300.05 MHz. VDS = 32 V; f1 = 1299.95 MHz; f2 = 1300.05 MHz. (1) IDq = 100 mA (2) IDq = 400 mA (3) IDq = 700 mA (4) IDq = 1000 mA (5) IDq = 1200 mA Fig 10. Power gain and drain efficiency as function of average output power; typical values Fig 11. Third order intermodulation distortion as a function of average output power; typical values aaa-006012 0 25 50 75 100 125 150 16 0 17 20 18 40 19 60 20 80 PL(AV) (W) Gp Gp (dB) (dB) (dB) ηD ηD (%) (%) (%) Gp Gp ηD ηD aaa-006013 0 25 50 75 100 125 150 -80 -60 -40 -20 0 PL(AV) (W) IMD3 IMD3 IMD3 (dBc) (dBc) (dBc) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) |
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