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BLF647P Datasheet(PDF) 8 Page - Ampleon Netherlands B.V. |
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BLF647P Datasheet(HTML) 8 Page - Ampleon Netherlands B.V. |
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8 / 14 page ![]() BLF647P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 8 of 14 BLF647P Broadband power LDMOS transistor 7.3.2 1-Tone pulsed IDq = 100 mA; f = 1300 MHz. (1) VDS =32V (2) VDS =28V (3) VDS =25V (4) VDS =20V (5) VDS =15V IDq = 100 mA; f = 1300 MHz. (1) VDS =32V (2) VDS =28V (3) VDS =25V (4) VDS =20V (5) VDS =15V Fig 7. Power gain as a function of output power; typical values Fig 8. Drain efficiency as a function of output power; typical values aaa-006009 0 50 100 150 200 250 12 14 16 18 20 PL (W) Gp Gp (dB) (dB) (dB) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) aaa-006010 0 50 100 150 200 250 0 20 40 60 80 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) VDS = 32 V;IDq = 100 mA; f = 1300 MHz; tp = 100 s; = 20%. Fig 9. Power gain and drain efficiency as function of output power; typical values aaa-006011 0 50 100 150 200 250 300 15 0 16 20 17 40 18 60 19 80 PL (W) Gp Gp (dB) (dB) (dB) ηD ηD (%) (%) (%) Gp Gp ηD ηD |
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