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BLF647P Datasheet(PDF) 8 Page - Ampleon Netherlands B.V.

Part # BLF647P
Description  Broadband power LDMOS transistor
PDF  14 Pages
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Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

BLF647P Datasheet(HTML) 8 Page - Ampleon Netherlands B.V.

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BLF647P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
8 of 14
BLF647P
Broadband power LDMOS transistor
7.3.2 1-Tone pulsed
IDq = 100 mA; f = 1300 MHz.
(1) VDS =32V
(2) VDS =28V
(3) VDS =25V
(4) VDS =20V
(5) VDS =15V
IDq = 100 mA; f = 1300 MHz.
(1) VDS =32V
(2) VDS =28V
(3) VDS =25V
(4) VDS =20V
(5) VDS =15V
Fig 7.
Power gain as a function of output power;
typical values
Fig 8.
Drain efficiency as a function of output power;
typical values
aaa-006009
0
50
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12
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20
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
(1)
(1)
(1)
(2)
(2)
(2)
(3)
(3)
(3)
(4)
(4)
(4)
(5)
(5)
(5)
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0
20
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PL (W)
ηD
ηD
(%)
(%)
(%)
(1)
(1)
(1)
(2)
(2)
(2)
(3)
(3)
(3)
(4)
(4)
(4)
(5)
(5)
(5)
VDS = 32 V;IDq = 100 mA; f = 1300 MHz; tp = 100 s;  = 20%.
Fig 9.
Power gain and drain efficiency as function of output power; typical values
aaa-006011
0
50
100
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300
15
0
16
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PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
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Gp
Gp
ηD
ηD



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