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BLF647P Datasheet(PDF) 6 Page - Ampleon Netherlands B.V.

Part # BLF647P
Description  Broadband power LDMOS transistor
PDF  14 Pages
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Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

BLF647P Datasheet(HTML) 6 Page - Ampleon Netherlands B.V.

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BLF647P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 14
BLF647P
Broadband power LDMOS transistor
7.3 Graphical data
7.3.1 1-Tone CW
VDS = 32 V; IDq = 100 mA; f = 1300 MHz.
VDS = 32 V; IDq = 100 mA; f = 1300 MHz.
(1) PL(1dB) =53.4dBm (217W)
(2) PL(3dB) =53.9dBm (245W)
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Output power as a function of input power;
typical values
aaa-006005
0
50
100
150
200
250
300
15
0
16
20
17
40
18
60
19
80
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
(%)
Gp
Gp
ηD
ηD
Pi (dBm)
32
40
38
34
36
aaa-006006
54
52
56
58
PL
(dBm)
50
PL
(2)
Ideal PL
(1)



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