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BLF647P Datasheet(PDF) 6 Page - Ampleon Netherlands B.V. |
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BLF647P Datasheet(HTML) 6 Page - Ampleon Netherlands B.V. |
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6 / 14 page ![]() BLF647P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 6 of 14 BLF647P Broadband power LDMOS transistor 7.3 Graphical data 7.3.1 1-Tone CW VDS = 32 V; IDq = 100 mA; f = 1300 MHz. VDS = 32 V; IDq = 100 mA; f = 1300 MHz. (1) PL(1dB) =53.4dBm (217W) (2) PL(3dB) =53.9dBm (245W) Fig 3. Power gain and drain efficiency as function of output power; typical values Fig 4. Output power as a function of input power; typical values aaa-006005 0 50 100 150 200 250 300 15 0 16 20 17 40 18 60 19 80 PL (W) Gp Gp (dB) (dB) (dB) ηD ηD (%) (%) (%) Gp Gp ηD ηD Pi (dBm) 32 40 38 34 36 aaa-006006 54 52 56 58 PL (dBm) 50 PL (2) Ideal PL (1) |
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