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BLF647P Datasheet(PDF) 7 Page - Ampleon Netherlands B.V. |
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BLF647P Datasheet(HTML) 7 Page - Ampleon Netherlands B.V. |
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7 / 14 page ![]() BLF647P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 7 of 14 BLF647P Broadband power LDMOS transistor VDS = 32 V; f = 1300 MHz. (1) IDq =50mA (2) IDq = 100 mA (3) IDq = 200 mA (4) IDq = 300 mA (5) IDq = 700 mA (6) IDq = 1000 mA (7) IDq = 1200 mA VDS = 32 V; f = 1300 MHz. (1) IDq =50mA (2) IDq = 100 mA (3) IDq = 200 mA (4) IDq = 300 mA (5) IDq = 700 mA (6) IDq = 1000 mA (7) IDq = 1200 mA Fig 5. Power gain as a function of output power; typical values Fig 6. Drain efficiency as a function of output power; typical values aaa-006007 0 50 100 150 200 250 12 14 16 18 20 PL (W) Gp Gp (dB) (dB) (dB) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) (7) (7) (7) aaa-006008 0 50 100 150 200 250 0 20 40 60 80 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) (7) (7) (7) |
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