BLF989_BLF989S

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© Ampleon Netherlands B.V. 2019. All rights reserved.

Product data sheet

Rev. 3 — 24 May 2019

3 of 13

BLF989; BLF989S

UHF power LDMOS transistor

5. Thermal characteristics

[1]

Measured in a broadband application circuit, using DVB-T (8k OFDM) signal; PAR (of output signal) at

0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

6. Characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1] 0.13 K/W

Table 6.

DC characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

108

-

-

V

gate-source threshold voltage

2.2

2.5

V

drain leakage current

-

-

2.8

A

drain cut-off current

-41

-

A

gate leakage current

-

-

280

nA

-90

-

m



Table 7.

AC characteristics

Symbol Parameter

Conditions

Min Typ

Max Unit

input capacitance

368

-

pF

output capacitance

69

-

pF

0.86

-

pF

Table 8.

RF characteristics

Symbol Parameter

Conditions

Min

Typ Max Unit

DVB-T (8k OFDM), class-AB operation

drain-source voltage

-

50

-

V

quiescent drain current

per section

-

650 -

mA

average output power

f = 700 MHz

135

-

-

W

power gain

f = 700 MHz

21.5 22.5 -

dB

drain efficiency

f = 700 MHz

32

35

-

%

ACPR

adjacent channel power ratio

f = 700 MHz

-

30 27 dBc

PAR

peak-to-average ratio

f = 700 MHz

-

8

-

dB