BLF989 datasheet(4/13 Pages) AMPLEON

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BLF989_BLF989S

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Product data sheet

Rev. 3 — 24 May 2019

4 of 13

BLF989; BLF989S

UHF power LDMOS transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLF989 and BLF989S are capable of withstanding a load mismatch corresponding to

VSWR

 40 : 1 through all phases under the following conditions: VDS =60 V;

f = 700 MHz; PL = 135 W: DVB-T; PAR = 8 dB.

7.2 Test circuit

Printed-Circuit Board (PCB): RO4350B:

r = 3.48 F/m; height = 0.762 mm; Cu (top/bottom metallization); thickness copper

plating = 35

m. See Table 9 for a list of components.

Fig 1.

PCB and component layout of production RF test circuit

150.3 mm

80 mm

C1 C3 C5

C11

C12

C13

C14

C15

C16

C10

C17

C19

C23

C21

C18

C20

C22

C24

C31

C32

C33

C34

C35

C36

C37

amp00755

Table 9.

List of components

See Figure 1 for component layout.

Component

Description

Value

Remarks

multilayer ceramic chip capacitor 12 pF

ATC800R

C2, C3,C4,C5,C6

multilayer ceramic chip capacitor 8.2 pF

ATC800R

multilayer ceramic chip capacitor 6.8 pF

ATC800B

multilayer ceramic chip capacitor 2.7 pF

ATC800B

multilayer ceramic chip capacitor 22 pF

ATC800B

C10, C13, C14

multilayer ceramic chip capacitor 100 pF

ATC180R

C11, C12

multilayer ceramic chip capacitor 10 pF

ATC800B

C15, C16

multilayer ceramic chip capacitor 4.7

F, 50 V

Kemet: C1210X475K5RAC-TU or similar

C17, C18, C23, C24

multilayer ceramic chip capacitor 100 pF

ATC800B

C19, C20

multilayer ceramic chip capacitor 10

F, 50 V

TDK: C570X7R1H106KT000N or similar

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