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LPC2387 Datasheet(PDF) 46 Page - NXP Semiconductors |
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LPC2387 Datasheet(HTML) 46 Page - NXP Semiconductors |
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46 / 66 page ![]() LPC2387 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 5.1 — 16 October 2013 46 of 66 NXP Semiconductors LPC2387 Single-chip 16-bit/32-bit MCU 11.4 Flash memory [1] Number of program/erase cycles. [2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes. Table 12. Dynamic characteristics of flash Tamb = 40 C to +85 C, unless otherwise specified; VDD(3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to ground. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles tret retention time powered; < 100 cycles [2] 10 --years unpowered; < 100 cycles 20 - - years ter erase time sector or multiple consecutive sectors 95 100 105 ms tprog programming time [2] 0.95 1 1.05 ms |
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