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6.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)

PARAMETER

TEST CONDITIONS

DEVICE

MIN

TYP

MAX UNIT

VRWM

Reverse stand-off voltage

ESD752

–24

VBRF

Forward breakdown voltage(2)

IIO = 10 mA, IO to GND

ESD752

25.5

35.5

VBRR

Reverse breakdown voltage(2)

IIO = –10 mA, IO to GND

ESD752

–35.5

–25.5

VCLAMP

Clamping voltage(4)

IPP = 5.7 A, tp = 8/20 µs, IO to GND

ESD752

Clamping voltage(5)

IPP = 16 A, TLP, IO to GND or GND to IO

VHold

Holding voltage after snapback(3) TLP

ESD752

ILEAK

Leakage current

VIO = ±24 V, IO to GND

ESD752

-50

RDYN

Dynamic resistance(5)

IO to GND

ESD752

0.35

GND to IO

0.35

Line capacitance(6)

VIO = 0 V, f = 1 MHz, Vpp = 30 mV

ESD752

(1)

Measurements made on both IO channels.

(2)

VBRF and VBRR are defined as the voltage when ± 10 mA is applied in the positive or negative direction respectively, before the device

latches into the snapback state.

(3)

VHOLD is defined as the lowest voltage on the TLP plot once the trigger threshold is reached and the device snapbacks and begins

clamping the voltage.

(4)

Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

(5)

Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.

(6)

Measured from IO to GND on both channels.

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ESD752

SLVSGX0A – MAY 2022 – REVISED AUGUST 2022

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