STRH12P10 datasheet(5/15 Pages) STMICROELECTRONICS

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3.2

Single event effect SOA

Single event burnout (SEB) and single event gate rupture (SEGR) are performed according to MIL-STD-750E,

method 1080, using bias circuit shown in Figure 2. Single event effect, bias circuit, at the following conditions.

•

Fluence of 3e+5 ions/cm

•

Acceptance criteria:

–

SEB (test): drain voltage checked, trigger level is set to VDS = - 5 V. Stop condition: as soon as a SEB

occurs or if the fluence reaches 3e+5 ions/cm².

–

SEGR test: the gate current is monitored every 200 ms. The test is halted as soon as the gate current

reaches 100 nA during irradiation or during post irradiation gate stress (PIGS) or if the fluence reaches

3e+5 ions/cm².

Table 6. Single event effect (SEE), safe operating area (SOA)

Ion

Let (Mev/(mg/cm2)

Energy

(MeV)

Range

(μm)

768

756

285

1217

Figure 1. Single event effect, SOA

Figure 2. Single event effect, bias circuit

270

820 pF

Vgs

220 nF

4.7 µF

Vds

AM09224v1

STRH12P10

Single event effect RBSOA

DS8699 - Rev 9

page 5/15

STRH12P10 Datasheet(PDF) 5 Page - STMicroelectronics