STRH12P10 datasheet(4/15 Pages) STMICROELECTRONICS

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Radiation characteristics

The STRH12P10 is guaranteed in radiation for single event effects (SEE) as per ESCC25100 and total ionizing

dose (TID) as per ESCC 22900.

3.1

Total dose radiation (TID) testing

Each lot is tested in radiation and accepted according to the parameters of Table 5 at the following conditions.

•

VGS = - 15 V and VDS = 0 V applied during irradiation exposure.

•

Before irradiation

•

After irradiation

•

After 24 hrs at room temperature

•

after 168 hrs at 100 °C anneal

Table 5. Post-irradiation electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Drift values Δ

Unit

IDSS

Zero gate voltage drain current (VGS = 0)

80% V(BR)DSS

µA

IGSS

Gate body leakage current

VGS = 12 V

1.5

VGS = -12 V

-1.5

V(BR)DSS Drain-to-source breakdown voltage

VGS = 0 V, ID = 1 mA

+5%

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

+ 150%

RDS(on)

Static drain-source on resistance

VGS = 10 V, ID = 12 A

-4% / +35%

Ω

VSD (1)

Forward on voltage

VGS = 0 V, ISD = 12 A

±5%

1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

STRH12P10

Radiation characteristics

DS8699 - Rev 9

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