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SPC58EG80C3 Datasheet(PDF) 77 Page - STMicroelectronics |
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SPC58EG80C3 Datasheet(HTML) 77 Page - STMicroelectronics |
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77 / 139 page ![]() DS11758 Rev 6 77/139 SPC584Gx, SPC58EGx, SPC58NGx Electrical characteristics 77 All the Flash operations require the presence of the system clock for internal synchronization. About 50 synchronization cycles are needed: this means that the timings of the previous table can be longer if a low frequency system clock is used. 8. Rate computed based on 256 KB sectors. 9. Only code sectors, not including EEPROM. 10. Time between suspend resume and next suspend. Value stated actually represents Min value specification. 11. Timings guaranteed by design. 12. AIC is done using system clock, thus all timing is dependent on system frequency and number of wait states. Timing in the table is calculated at max frequency. Table 42. Flash memory Life Specification Symbol Characteristics(1) (2) 1. Program and erase cycles supported across specified temperature specifications. 2. It is recommended that the application enables the core cache memory. Value Unit Min C Typ C NCER16K 16 KB CODE Flash endurance 10 — 100 — Kcycles NCER32K 32 KB CODE Flash endurance 10 — 100 — Kcycles NCER64K 64 KB CODE Flash endurance 10 — 100 — Kcycles NCER128K 128 KB CODE Flash endurance 1 — 100 — Kcycles NCER256K 256 KB CODE Flash endurance 1 — 100 — Kcycles 256 KB CODE Flash endurance(3) 3. 10K cycles on 4-256 KB blocks is not intended for production. Reduced reliability and degraded erase time are possible. 10 — 100 — Kcycles NDER64K 64 KB DATA EEPROM Flash endurance 250 — — — Kcycles NDER16K 16 KB HSM DATA EEPROM Flash endurance 100 — — — Kcycles tDR1k Minimum data retention Blocks with 0 - 1,000 P/E cycles 25 — — — Years tDR10k Minimum data retention Blocks with 1,001 - 10,000 P/E cycles 20 — — — Years tDR100k Minimum data retention Blocks with 10,001 - 100,000 P/E cycles 15 — — — Years tDR250k Minimum data retention Blocks with 100,001 - 250,000 P/E cycles 10 — — — Years |
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