SPC58EG80C3 datasheet(26/139 Pages) STMICROELECTRONICS

26 / 139 page

Electrical characteristics

SPC584Gx, SPC58EGx, SPC58NGx

26/139

DS11758 Rev 6

IDDSTBY8

Total standby mode

current on VDD_LV and

VDD_HV supply, 8 KB

RAM(11)

TJ = 25 °C

—

145

380

µA

CTJ = 40 °C

—

550

DTJ = 55 °C

—

820

DTJ = 120 °C

—

PTJ = 150 °C

—

IDDSTBY128

Total standby mode

current on VDD_LV and

VDD_HV supply,

128 KB RAM(11)

TJ = 25 °C

—

170

530

µA

CTJ = 40 °C

—

790

µA

DTJ =55°C

—

1.2

DTJ = 120 °C

—

5.5

PTJ = 150 °C

—

IDDSTBY256

Total standby mode

current on VDD_LV and

VDD_HV supply,

256 KB RAM(11)

TJ = 25 °C

—

200

680

µA

CTJ =40°C

—

1.0

DTJ =55°C

—

1.5

DTJ = 120 °C

—

PTJ = 150 °C

—

IDDSSWU1

SSWU running over all

STANDBY period with

OPC/TU commands

execution and keeping

ADC off(12)

TJ =40°C

—

1.0

3.5

IDDSSWU2

SSWU running over all

STANDBY period with

OPC/TU/ADC

commands execution

and keeping ADC

on(13)

TJ =40°C

—

3.5

5.0

IDD_LV_BD

Buddy Device

Consumption on

VDD_LV supply(14)

TJ = 150 °C

—

500

IDD_HV_BD

Buddy Device

Consumption on

VDD_HV supply(14)

—

130

1. The ranges in this table are design targets and actual data may vary in the given range.

2. The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered,

and they are computed in the dynamic IDD_LV and IDD_HV parameters.

3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the

consumption contributors. The tests used in validation, characterization and production are verifying that the total

consumption (leakage+dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG +IDD_LV). The two

parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions and

the software profile used.

Table 9. Device consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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