SPC58EG80C3 datasheet(90/139 Pages) STMICROELECTRONICS

90 / 139 page

Electrical characteristics

SPC584Gx, SPC58EGx, SPC58NGx

90/139

DS11758 Rev 6

4tSDC CC D SCK duty cycle(6)

SCK drive strength

Very strong

0 pF

1/2tSCK –2

1/2tSCK +2

Strong

0 pF

1/2tSCK –2

1/2tSCK +2

Medium

0 pF

1/2tSCK –5

1/2tSCK +5

PCS strobe timing

5tPCSC CC D

PCSx to PCSS

time(7)

PCS and PCSS drive

strength

Strong

25 pF

16.0

—

6tPASC CC D

PCSS to PCSx

time(7)

PCS and PCSS drive

strength

Strong

25 pF

16.0

—

SIN setup time

7tSUI CC D

SIN setup time to

SCK

CPHA = 0(8)

SCK drive strength

Very strong

25pF

25–(P(9) ×tSYS(4))—

Strong

50 pF

31 – (P(9) ×tSYS(4))—

Medium

50 pF

52 – (P(9) ×tSYS(4))—

SIN setup time to

SCK

CPHA = 1(8)

SCK drive strength

Very strong

25 pF

25.0

—

Strong

50 pF

31.0

—

Medium

50 pF

52.0

—

SIN hold time

8tHI

CC D

SIN hold time

from SCK

CPHA = 0(8)

SCK drive strength

Very strong

0 pF

–1 + (P(9) ×tSYS(3))—

Strong

0pF

–1+(P(9) ×tSYS(3))—

Medium

0 pF

–1 + (P(9) ×tSYS(3))—

SIN hold time

from SCK

CPHA = 1(8)

SCK drive strength

Very strong

0 pF

–1.0

—

Strong

0 pF

–1.0

—

Medium

0 pF

–1.0

—

Table 48. DSPI CMOS master modified timing (full duplex and output only)

MTFE = 1, CPHA = 0 or 1 (continued)

Symbol

C Characteristic

Condition

Value(1)

Unit

Pad drive(2)

Load (CL)Min

Max

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