STGW40H65DFB datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STGW40H65DFB

Description	Trench gate field-stop 650 V, 40 A high speed HB series IGBT

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 16 page

2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

IGBT230216EWF6GPDT

250

200

150

100

100 125 150

PTOT

(W)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

IGBT230216EWF6GCCT

100 125 150

(A)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

IGBT230216EWF6GOC25

140

120

100

(A)

VCE (V)

VGE = 15 V

13 V

11 V

9 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT230216EWF6GOC175

140

120

100

(A)

VCE (V)

VGE = 15 V

13 V

11 V

9 V

7 V

Figure 5. VCE(sat) vs junction temperature

IGBT230216EWF6GVCET

2.4

2.2

2.0

1.8

1.6

1.4

1.2

-75

-25

125

175

VCE(SAT)

(V)

TJ (°C)

VGE = 15 V

IC = 80 A

IC = 40 A

IC = 20 A

Figure 6. VCE(sat) vs collector current

IGBT230216EWF6GVCEC

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

VCE(SAT)

(V)

IC (A)

VGE = 15 V

TJ = 175 °C

TJ = 25 °C

TJ = -40 °C

STGW40H65DFB

Electrical characteristics (curves)

DS9533 - Rev 9

page 5/16

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