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STGW40H65DFB Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGW40H65DFB
Description  Trench gate field-stop 650 V, 40 A high speed HB series IGBT
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40H65DFB Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
IGBT230216EWF6GCVR
10 3
10 2
10 1
10 -1
10 0
10 1
10 2
C
(pF)
VCE (V)
CRES
COES
CIES
Figure 14. Gate charge vs gate-emitter voltage
IGBT230216EWF6GGCGE
15
10
5
0
0
40
80
120
160
200
VGE
(V)
Qg (nC)
VCC = 520 V, IC = 40 A
Figure 15. Switching energy vs collector current
IGBT230216EWF6GSLC
3000
2400
1800
1200
600
0
0
10
20
30
40
50
60
70
E
(µJ)
IC (A)
VCC = 400 V, RG = 5 Ω
VGE = 15 V, TJ = 175 °C
Eoff
Eon
Figure 16. Switching energy vs gate resistance
IGBT230216EWF6GSLG
2000
1600
1200
800
400
0
4
8
12
16
20
E
(µJ)
RG (Ω)
VCC = 400 V, IC = 40 A
VGE = 15 V, TJ = 175 °C
Eoff
Eon
Figure 17. Switching energy vs temperature
IGBT230216EWF6GSLT
1200
800
400
0
-75
-25
25
75
125
175
E
(μJ)
TJ (°C)
VCC = 400 V, IC = 40 A
RG = 5 Ω, VGE = 15 V
Eoff
Eon
Figure 18. Switching energy vs collector emitter voltage
IGBT230216EWF6GSLV
2000
1600
1200
800
400
0
150 200 250 300 350 400 450 500
E
(µJ)
VCE (V)
IC = 40 A, RG = 5 Ω
VGE = 15 V, TJ = 175 °C
Eoff
Eon
STGW40H65DFB
Electrical characteristics (curves)
DS9533 - Rev 9
page 7/16



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