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STGW40H65DFB Datasheet(PDF) 6 Page - STMicroelectronics

Part # STGW40H65DFB
Description  Trench gate field-stop 650 V, 40 A high speed HB series IGBT
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40H65DFB Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Collector current vs switching frequency
IGBT230216EWF6GCCS
100
80
60
40
20
0
10 0
10 1
10 2
IC
(A)
f (kHz)
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V
RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C
TC = 80 °C
TC = 100 °C
Figure 8. Forward bias safe operating area
IGBT230216EWF6GFSOA
10 2
10 1
10 0
10 0
10 1
10 2
IC
(A)
VCE (V)
single pulse, TC = 25°C
TJ ≤ 175 °C, VGE = 15 V
tp = 10 µs
tp = 100 µs
tp = 1 ms
Figure 9. Transfer characteristics
IGBT230216EWF6GTCH
140
120
100
80
60
40
20
0
6
7
8
9
10
IC
(A)
VGE (V)
VCE = 5 V
TJ = 175 °C
TJ = 25 °C
TJ = 25 °C
TJ = 175 °C
Figure 10. Diode VF vs forward current
IGBT230216EWF6GDVF
2.3
2.0
1.7
1.4
1.1
0.8
20
30
40
50
60
70
80
VF
(V)
IF (A)
TJ = -40 °C
TJ = 25 °C
TJ = 175 °C
Figure 11. Normalized VGE(th) vs junction temperature
IGBT230216EWF6GNVGE
1.2
1.0
0.8
0.6
0.4
-75
-25
25
75
125
175
VGE(th)
(Norm.)
TJ (°C)
VCE = VGE , IC = 1 mA
Figure 12. Normalized V(BR)CES vs junction temperature
IGBT230216EWF6GNVBR
1.12
1.08
1.04
1.00
0.96
0.92
0.88
-75
-25
25
75
125
175
V(BR)CES
(Norm.)
TJ (°C)
IC = 2 mA
STGW40H65DFB
Electrical characteristics (curves)
DS9533 - Rev 9
page 6/16



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