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STGW40H65DFB Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGW40H65DFB
Description  Trench gate field-stop 650 V, 40 A high speed HB series IGBT
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40H65DFB Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω (see
Figure 27. Test circuit for
inductive load switching)
40
-
ns
tr
Current rise time
13
-
(di/dt)on
Turn-on current slope
2413
-
A/µs
td(off)
Turn-off-delay time
142
-
ns
tf
Current fall time
27
-
Eon (1)
Turn-on switching energy
498
-
µJ
Eoff (2)
Turn-off switching energy
363
-
Ets
Total switching energy
861
-
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω TJ = 175 °C
(see Figure 27. Test circuit for
inductive load switching)
38
-
ns
tr
Current rise time
14
-
(di/dt)on
Turn-on current slope
2186
-
A/µs
td(off)
Turn-off-delay time
141
-
ns
tf
Current fall time
61
-
Eon (1)
Turn-on switching energy
1417
-
µJ
Eoff (2)
Turn-off switching energy
764
-
Ets
Total switching energy
2181
-
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 400 V, VGE = 15 V
di/dt = 100 A/µs (see Figure 27.
Test circuit for inductive load
switching)
-
62
-
ns
Qrr
Reverse recovery charge
-
99
-
nC
Irrm
Reverse recovery current
-
3.3
-
A
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
-
187
-
A/µs
Err
Reverse recovery energy
-
68
-
µJ
trr
Reverse recovery time
IF = 40 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C di/
dt = 100 A/µs (see Figure 27.
Test circuit for inductive load
switching)
-
310
-
ns
Qrr
Reverse recovery charge
-
1550
-
nC
Irrm
Reverse recovery current
-
10
-
A
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
-
70
-
A/µs
Err
Reverse recovery energy
-
674
-
µJ
STGW40H65DFB
Electrical characteristics
DS9533 - Rev 9
page 4/16



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