TO-247

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Features

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Maximum junction temperature: TJ = 175 °C

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High speed switching series

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Minimized tail current

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Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

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Tight parameter distribution

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Safe paralleling

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Positive VCE(sat) temperature coefficient

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Low thermal resistance

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Very fast soft recovery antiparallel diode

Applications

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Photovoltaic inverters

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High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGW40H65DFB

Product summary

Order code

STGW40H65DFB

Marking

GW40H65DFB

Package

TO-247

Packing

Tube

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

STGW40H65DFB

Datasheet

DS9533 - Rev 9 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com