PA52 • PA52A

4

PA52U Rev J

SPECIFICATIONS

Unless otherwise noted: TC = 25°C, DC input specifications are ± value given. Power supply voltage is typical

rating. ±VBOOST = ±VS.

ABSOLUTE MAXIMUM RATINGS

The PA52 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do

not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic

fumes.

Parameter

Symbol

Min

Max

Units

Supply Voltage, +Vs To -Vs

+Vs to -Vs

200

V

Boost Voltage, +VB To -VB

230

V

Output Current, within SOA

IO

80

A

Power Dissipation, internal

PD

400

W

Input Voltage, differential

VIN (Diff)

-20

20

V

Input Voltage, common mode

Vcm

-VB

+VB

V

Temperature, pin solder, 10s

350

°C

Temperature, junction 1

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dis-

sipation to achieve high MTTF. For guidance, refer to the heatsink data sheet.

TJ

150

°C

Temperature, storage

-65

+150

°C

Operating Temperature Range, case

TC

-55

+125

°C

CAUTION