DS18B20

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ABSOLUTE MAXIMUM RATINGS

Voltage Range on Any Pin Relative to Ground ..................................................................-0.5V to +6.0V

Operating Temperature Range .......................................................................................-55

°C to +125°C

Storage Temperature Range...........................................................................................-55

°C to +125°C

Solder Temperature .....................................................Refer to the IPC/JEDEC J-STD-020 Specification.

These are stress ratings only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods of time may affect reliability.

DC ELECTRICAL CHARACTERISTICS

(-55°C to +125°C; VDD=3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

NOTES

Supply Voltage

VDD

Local Power

+3.0

+5.5

V

1

Pullup Supply

Voltage

VPU

Parasite Power

+3.0

+5.5

V

1,2

Local Power

+3.0

VDD

Thermometer

Error

tERR

-10°C to +85°C

±0.5

°C

3

-55°C to +125°C

±2

Input Logic-Low

VIL

-0.3

+0.8

V

1,4,5

Input Logic-High

VIH

Local Power

+2.2

The lower of

5.5

or

VDD + 0.3

V

1, 6

Parasite Power

+3.0

Sink Current

IL

VI/O = 0.4V

4.0

mA

1

Standby Current

IDDS

750

1000

nA

7,8

Active Current

IDD

VDD = 5V

1

1.5

mA

9

DQ Input Current

IDQ

5

µA

10

Drift

±0.2

°C

11

NOTES:

1) All voltages are referenced to ground.

2) The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the

high level of the pullup is equal to VPU. In order to meet the VIH spec of the DS18B20, the actual

supply rail for the strong pullup transistor must include margin for the voltage drop across the

transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR.

3) See typical performance curve in Figure 17.

4) Logic-low voltages are specified at a sink current of 4mA.

5) To guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have to be

reduced to as low as 0.5V.

6) Logic-high voltages are specified at a source current of 1mA.

7) Standby current specified up to +70

°C. Standby current typically is 3µA at +125°C.

8) To minimize IDDS, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or

VDD – 0.3V ≤ DQ ≤ VDD.

9) Active current refers to supply current during active temperature conversions or EEPROM writes.

10) DQ line is high (“high-Z” state).

11) Drift data is based on a 1000-hour stress test at +125°C with VDD = 5.5V.