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AP62301 Datasheet(PDF) 14 Page - Diodes Incorporated |
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AP62301 Datasheet(HTML) 14 Page - Diodes Incorporated |
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14 / 23 page ![]() AP62300/AP62301/AP62300T Document number: DS41958 Rev. 3 - 2 14 of 23 www.diodes.com January 2021 © Diodes Incorporated AP62300/AP62301/AP62300T Application Information (continued) 3 Enable (continued) Alternatively, a small ceramic capacitor can be added from EN to GND. When EN is not driven externally, this capacitor increases the time needed for the EN pin voltage to reach its logic high threshold, which delays the startup of the output voltage. This is useful when sequencing multiple power rails to minimize input inrush current. When the EN pin voltage starts from 0V, the amount of capacitance for a given delay time is approximated by: ������������[������������] ≈ ������. ������������������ ∙ ������������[������������] Eq. 3 Where: Cd is the time delay capacitance in nF td is the delay time in ms 4 Electromagnetic Interference (EMI) Reduction with Ringing-Free Switching Node In some applications, the system must meet EMI standards. In relation to high frequency radiation EMI noise, the switching node’s (SW’s) ringing amplitude is especially critical. To dampen high frequency radiated EMI noise, the AP62300/AP62301/AP62300T device implements a proprietary, multi-level gate driver scheme that achieves a ringing-free switching node without sacrificing the switching nod e’s rise and fall slew rates as well as the converter’s power efficiency. 5 Adjusting Undervoltage Lockout (UVLO) Undervoltage lockout is implemented to prevent the IC from insufficient input voltages. The AP62300/AP62301/AP62300T device has a UVLO comparator that monitors the input voltage and the internal bandgap reference. The AP62300/AP62301/AP62300T disables if the input voltage falls below 3.6V. In this UVLO event, both the high-side and low-side power MOSFETs turn off. Some applications may desire higher VIN UVLO threshold voltages than is provided by the default setup. A 5.5µA hysteresis pull-up current source on the EN pin along with an external resistive divider (R3 and R4) configures the VIN UVLO threshold voltages as shown in Figure 39. VIN R3 R4 ON EN 1.2V I1 1.5μA I2 5.5μA 20kΩ + – Figure 39. Programming UVLO The resistive divider resistor values are calculated by: ������������ = ������. ������������������ ∙ ������������������ − ������������������������ ������. ������������������������������ Eq. 4 ������������ = ������. ������ ∙ ������������ ������������������������ − ������. ������������ + ������������������ ∙ ������������ Eq. 5 Where: VON is the rising edge VIN voltage to enable the regulator and is greater than 4.15V VOFF is the falling edge VIN voltage to disable the regulator and is greater than 3.85V |
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