AP63356/AP63357

Document number: DS41949 Rev. 3 - 2

7 of 29

www.diodes.com

August 2019

© Diodes Incorporated

AP63356/AP63357

Typical Performance Characteristics (AP63356/AP63357 at TA = +25°C, VIN = 12V, VOUT = 5V, unless otherwise

specified.)

Figure 5. Power MOSFET RDS(ON) vs. Temperature

Figure 6. ISHDN vs. Temperature

Figure 7. VIN Power-On Reset and UVLO vs. Temperature

10

20

30

40

50

60

70

80

90

100

110

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

High-Side MOSFET

Low-Side MOSFET

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

VIN Rising POR

VIN Falling UVLO