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GP7NC60H Datasheet(PDF) 5 Page - STMicroelectronics

Part # GP7NC60H
Description  N-channel PowerMESH™ 600 V, 14 A very fast IGBT
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GP7NC60H Datasheet(HTML) 5 Page - STMicroelectronics

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STGP7NC60H
Electrical characteristics
DocID10855 Rev 3
5/14
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 390 V, IC = 7 A,
VGE = 15 V, RG = 10
Ω
(see Figure 16: "Ic vs
frequency" and Figure 17:
"Test circuit for inductive load
switching")
-
18.5
ns
tr(on)
Turn-on rise time
-
8.5
ns
di/dt(on)
Turn-on current slope
-
1060
A/µs
tr(off)
Turn-off rise time
-
27
ns
td(off)
Turn-off delay time
-
72
ns
tf
Fall time
-
60
ns
Eon(1)
Turn-on switching energy
-
95
125
µJ
Eoff(2)
Turn-off switching energy
-
115
150
µJ
Ets
Total switching energy
-
210
275
µJ
td(on)
Turn-on delay time
VCE = 390 V, IC = 7 A,
VGE = 15 V, RG = 10
Ω
TJ = 125 °C
(see Figure 17: "Test circuit
for inductive load switching")
-
18.5
ns
tr(on)
Turn-on rise time
-
7
ns
di/dt(on)
Turn-on current slope
-
1000
A/µs
tr(off)
Turn-off rise time
-
56
ns
td(off)
Turn-off delay time
-
116
ns
tf
Fall time
-
105
ns
Eon(1)
Turn-on switching energy
-
140
µJ
Eoff(2)
Turn-off switching energy
-
215
µJ
Ets
Total switching energy
-
355
µJ
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Obsolete
Product(s)
- Obsolete
Product(s)



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