ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

MHW2821–1 MHW2821–2

2

MOTOROLA RF/IF DEVICE DATA

MAXIMUM RATINGS (Flange Temperature = 25

°C, unless otherwise noted.)

Rating

Symbol

Value

Unit

DC Supply Voltages

Vbias,

12.5

Vdc

VS2, VS3

16

RF Input Power

Pin

400

mW

RF Output Power

Pout

23

W

Operating Case Temperature Range

TC

–30 to 100

°C

Storage Temperature Range

Tstg

–30 to 100

°C

NOTES: 1. Meets Human Body Model (HBM)

≤3000 V.

2. ESD data available upon request.

ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = 25°C, 50 Ω system, unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Frequency Range

BW

MHz

MHW2821–1

806

–

870

MHW2821–2

890

–

950

Input Power

Pin

mW

MHW2821–1 (Pout = 20 W) [Note]

–

–

250

MHW2821–2 (Pout = 18 W) [Note]

–

–

300

Power Gain

GP

dB

MHW2821–1 (Pout = 20 W) [Note]

19

–

–

MHW2821–2 (Pout = 18 W) [Note]

17.9

–

–

Efficiency (Rated Pout)

η

35

–

–

%

Harmonics (Rated Pout Reference) [Note]

2fo

–

–

–40

dBc

3fo

–

–45

Input VSWR (Rated Pout) [Note]

VSWRin

–

–

3:1

–

Load Mismatch Stress (Vsupply = 16 Vdc; Pout = 20 W for MHW2821–1;

ψ

No Degradation in

Ot

t P

Pout = 18 W for MHW2821–2; Load VSWR = 20:1,

g

Output Power

B f

d Aft

T

t

All Phase Angles at Frequency of Test) [Note]

Before and After Test

Stability (Vsupply = 10.8 to 16 Vdc; Pin = 0 to 250 mW for MHW2821–1;

–

All Spurious Outputs

Mth

60 dB

Pin = 0 to 300 mW for MHW2821–2; Load VSWR = 4:1,

pp

More than 60 dB

Bl

D

i d Si

l

All Phase Angles at Frequency of Test

Below Desired Signal

Quiescent Current (With No RF Applied, VS2 = VS3 = 12.5 Vdc;

Isq

–

–

500

mA

Vbias = 12.5 Vdc)

Leakage Current (With No RF Applied, VS2 = VS3 = 12.5 Vdc;

IL

–

–

0.6

mA

Vbias = 0 Vdc)

Bias Pin Current (Rated Pout) [Note]

Ibias

–

–

3.0

mA

NOTE:

Adjust Pin for specified Pout.