ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

Device

Operating

Temperature Range

Package

MHW2821-1

MHW2821-2

SEMICONDUCTOR

TECHNICAL DATA

RF POWER AMPLIFIER

20 W, 806 to 870 MHz (–1 suffix)

18 W, 890 to 950 MHz (–2 suffix)

ORDERING INFORMATION

MHW2821–1

MHW2821–2

TA = –30 to 100°C

Power Module

CASE 301AB

1

5

(Top View)

PIN CONNECTIONS

Order this document by MHW2821/D

Pin

Vbias

VS2

VS3

1

2

3

4

5

Pout

1

MOTOROLA RF/IF DEVICE DATA

UHF Silicon FET

Power Amplifiers

Designed for 12.5 V UHF power amplifier applications in industrial and

commercial FM equipment operating from 806 to 950 MHz.

• Specified 12.5 V Characteristics:

RF Input Power:

≤250 mW (MHW2821–1)

≤300 mW (MHW2821–2)

RF Output Power: 20 W (MHW2821–1)

18 W (MHW2821–2)

• LDMOS FET Technology

• Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture

• 50 Ω Input/Output Impedance

• Guaranteed Stability and Ruggedness

• Cost Effective

Simplified Block Diagram

This device contains 2 active transistors

24

5

3

1

© Motorola, Inc. 1998

Rev 2