6.42

4

71024 CMOS Static RAM

1 Meg (128K x 8-Bit)

Commercial and Industrial Temperature Ranges

Mar.30.21

AC Electrical Characteristics

(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)

71024S12

71024S15

71024S20

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Read Cycle

tRC

Read Cycle Time

12

—

15

—

20

—

ns

tAA

Address Access Time

—

12

—

15

—

20

ns

tACS

Chip Select Access Time

—

12

—

15

—

20

ns

tCLZ(1)

Chip Select to Output in Low-Z

3

—

3

—

3

—

ns

tCHZ(1)

Chip Deselect to Output in High-Z

06

0708

ns

tOE

Output Enable to Output Valid

—

6

—

7

—

8

ns

tOLZ(1)

Output Enable to Output in Low-Z

0

—

0

—

0

—

ns

tOHZ(1)

Output Disable to Output in High-Z

05

0507

ns

tOH

Output Hold from Address Change

4

—

4

—

4

—

ns

tPU(1)

Chip Select to Power-Up Time

0

—

0

—

0

—

ns

tPD(1)

Chip Deselect to Power-Down Time

—

12

—

15

—

20

ns

Write Cycle

tWC

Write Cycle Time

12

—

15

—

20

—

ns

tAW

Address Valid to End-of-Write

10

—

12

—

15

—

ns

tCW

Chip Select to End-of-Write

10

—

12

—

15

—

ns

tAS

Address Set-Up Time

0

—

0

—

0

—

ns

tWP

Write Pulse Width

8

—

12

—

15

—

ns

tWR

Write Recovery Time

0

—

0

—

0

—

ns

tDW

Data Valid to End-of-Write

7

—

8

—

9

—

ns

tDH

Data Hold Time

0—

0

—

0—

ns

tOW(1)

Output Active from End-of-Write

3

—

3

—

4

—

ns

tWHZ(1)

Write Enable to Output in High-Z

05

0508

ns

2964 tbl 09

NOTE:

1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.