OXCF950 datasheet(57/66 Pages) OXFORD

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Page 57

OXCF950 rev B DATA SHEET V 1.0

OXFORD SEMICONDUCTOR LTD.

DC ELECTRICAL CHARACTERISTICS

9.1

3.0V to 3.6V Operation

Symbol

Parameter

Condition

Min.

Max.

Units

VDD

Supply voltage

3.0

3.6

VIH

Input high voltage

LVTTL 5V tolerant Note1

LVTTL

LVTTL Schmitt trigger

2.0

1.8 typical

2.3

Input low voltage

LVTTL 5V tolerant Note1

LVTTL

LVTTL Schmitt trigger

0.5

0.8

0.9 typical

Schmitt Hysteresis

LVTTL

0.4

IIH

Input high leakage current

Vin = VDD

-10

µA

IIL

Input low leakage current

Vin = VSS

-10

µA

VOH

Output high voltage

IOH = 2 mANote2

2.4

VOL

Output low voltage

IOL = 2 mA Note2

0.4

IOZ

3-state output leakage current

-10

µA

IST

Static current Note3

Vin = VDD or VSS

µA

ICC

Operating supply current in

normal mode Note3

fCK = 1.8432 MHz

fCK = 8.192 MHz

fCK = 50.00 MHz

0.9

3.3

10.7

1.1

3.6

11.4

Operating supply current in sleep

mode Note3

fCK = 1.8432 MHz

fCK = 8.192 MHz

fCK = 50.00 MHz

0.7

2.6

6.6

Table 49: DC Electrical Characteristics

Note 1: All input buffers are 5V tolerant LVTTL with the exception of RESET, Z_CTS,Z_DSR, Z_DCD and Z_RI which are Schmitt triggered

LVTTL, and XTLI which is LVTTL but not 5V tolerant.

Note 2: All output buffers are 4 mA drive capability, with the exception of the EEPROM signals, Z_IOIS16, Z_IREQ and the UART output

signals which are all 2 mA drive capability.

Note 3: Divider ratio of 1. These are sample measured figures.

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