BF1101 datasheet(7/16 Pages) PHILIPS

7 / 16 page

1999 May 14

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

Fig.13 Gate 1 current as a function of gate 2

voltage; typical values.

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.21.

handbook, halfpage

MGS307

IG1

(

µA)

VG2-S (V)

4.5 V

4 V

3.5 V

3 V

VGG = 5 V

Fig.14 Typical gain reduction as a function of

the AGC voltage; see Fig.21.

handbook, halfpage

−30

−20

−10

−40

−50

MGS308

234

gain

reduction

(dB)

VAGC (V)

(2)

(1)

(3)

VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =25 °C.

(1) RG1 =68kΩ.

(2) RG1 = 120 kΩ.

(3) RG1 = 180 kΩ.

Fig.15 Unwanted voltage for 1% cross-modulation

as a function of gain reduction;

typical values; see Fig.21.

handbook, halfpage

120

100

110

MGS309

Vunw

(dB

µV)

gain reduction (dB)

(2)

(3)

(1)

VDS = 5 V; VGG = 5 V; f = 50 MHz; funw = 60 MHz; Tamb =25 °C.

(1) RG1 =68kΩ.

(2) RG1 = 120 kΩ.

(3) RG1 = 180 kΩ.

Fig.16 Drain current as a function of gain reduction;

typical values; see Fig.21.

handbook, halfpage

MGS310

(mA)

gain reduction (dB)

(2)

(3)

(1)

VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =25 °C.

(1) RG1 =68kΩ.

(2) RG1 = 120 kΩ.

(3) RG1 = 180 kΩ.

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