BF1101 datasheet(9/16 Pages) PHILIPS

9 / 16 page

1999 May 14

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

Table 1

Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb =25 °C

Table 2

Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb =25 °C

(MHz)

S11

S21

S12

S22

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.987

−4.1

2.922

175.0

0.001

87.6

0.990

−2.2

100

0.985

−8.1

2.908

170.3

0.001

86.1

0.989

−4.3

200

0.976

−16.1

2.875

160.8

0.003

83.3

0.985

−8.5

300

0.963

−23.9

2.820

157.6

0.004

80.4

0.982

−12.6

400

0.949

−31.6

2.762

142.6

0.005

78.2

0.977

−16.8

500

0.933

−38.8

2.665

134.1

0.005

77.8

0.972

−20.8

600

0.916

−45.7

2.591

125.7

0.005

78.9

0.967

−24.7

700

0.897

−52.2

2.498

117.7

0.006

81.8

0.961

−28.5

800

0.877

−58.4

2.410

109.6

0.005

89.1

0.957

−32.2

900

0.856

−64.5

2.318

101.6

0.006

97.1

0.950

−35.8

1000

0.832

−70.3

2.214

94.2

0.006

110.4

0.946

−39.6

(MHz)

Fmin

(dB)

Γopt

(

Ω)

(ratio)

(deg)

800

1.5

0.715

58.3

37.85

Fig.21 Cross-modulation test set-up.

handbook, full pagewidth

DUT

4.7 nF

10 k

Ω

MGS315

4.7 nF

≈2.2 µH

4.7 nF

Ω

VGG

VAGC

VDS

RGEN

Ω

4.7 nF

RG1

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