BFG480 datasheet(9/16 Pages) PHILIPS

9 / 16 page

1998 Oct 21

Philips Semiconductors

Product speciﬁcation

NPN wideband transistor

BFG480W

Noise data

VCE = 2 V; typical values.

(MHz)

(mA)

Fmin

(dB)

Γmag

Γangle

(

Ω)

900

1.1

0.41

96.1

0.21

1.1

0.31

106.6

0.14

1.2

0.27

118.4

0.12

1.2

0.26

131.7

0.10

1.3

0.28

143.2

0.10

1.6

0.39

166.2

0.07

2.0

0.49

176.0

0.07

2.3

0.57

179.5

0.07

2.9

0.45

177.3

0.18

2000

2.4

0.57

171.9

0.09

2.0

0.49

178.9

0.08

1.8

0.46

−175.7

0.09

1.8

0.44

−171.7

0.09

1.8

0.43

−168.4

0.09

1.8

0.44

−165.3

0.10

1.8

0.44

−163.7

0.10

1.9

0.46

−158.3

0.11

2.3

0.52

−150.2

0.14

2.6

0.56

−147.7

0.18

2.8

0.60

−146.1

0.22

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =2V.

handbook, halfpage

020

MGR634

IC (mA)

Fmin

(dB)

900 MHz

2 GHz

APPLICATION INFORMATION

RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Figs 18 and 19).

MODE OF OPERATION

(GHz)

VCE

(V)

ICQ

(mA)

(mW)

(dB)

ηC

(%)

Pulsed; class-AB;

δ < 1 : 2; tp = 5 ms

3.6

100

typ. 13.5

typ. 45

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