1998 Oct 21

3

Philips Semiconductors

Product specification

NPN wideband transistor

BFG480W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

14.5

V

collector-emitter voltage

open base

−

4.5

V

emitter-base voltage

open collector

−

1V

collector current (DC)

−

250

mA

total power dissipation

−

360

mW

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

Fig.2 Power derating curve.

handbook, halfpage

0

40

80

160

500

0

400

MGR623

Ts (°C)

Ptot

(mW)

120

300

200

100

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

250

K/W