BFG480 datasheet(2/16 Pages) PHILIPS

2 / 16 page

1998 Oct 21

Philips Semiconductors

Product speciﬁcation

NPN wideband transistor

BFG480W

FEATURES

• High power gain

• High efficiency

• Low noise figure

• High transition frequency

• Emitter is thermal lead

• Low feedback capacitance

• Linear and non-linear operation.

APPLICATIONS

• RF front end with high linearity system demands

(CDMA)

• Common emitter class AB driver.

DESCRIPTION

NPN double polysilicon wideband transistor with buried

layer for low voltage applications in a 4-pin dual-emitter

SOT343R plastic package.

PINNING

DESCRIPTION

emitter

base

emitter

collector

Fig.1 Simplified outline SOT343R.

Marking code: P6.

handbook, halfpage

Top view

MSB842

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage open base

−

4.5

collector current (DC)

250

Ptot

total power dissipation

Ts ≤ 60 °C

−

360

transition frequency

IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C21

−

GHz

Gmax

maximum gain

IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C16

−

noise ﬁgure

IC = 8 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt

1.8

−

power gain

Pulsed; class-AB;

δ < 1 : 2; tp = 5 ms;

VCE = 3.6 V; f = 2 GHz; PL = 100 mW

13.5

−

ηC

collector efﬁciency

Pulsed; class-AB;

δ < 1 : 2; tp = 5 ms;

VCE = 3.6 V; f = 2 GHz; PL = 100 mW

−

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

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