BFG480 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Oct 21

Philips Semiconductors

Product speciﬁcation

NPN wideband transistor

BFG480W

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.

2. ZS is optimized for noise; ZL is optimized for gain.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC =50 µA; IE = 0

14.5

−−

V(BR)CEO

collector-emitter breakdown voltage

IC = 5 mA; IB = 0

4.5

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 100 µA; IC =0

−−

ICBO

collector-base leakage current

VCE =5V; VBE =0

−−

hFE

DC current gain

IC = 80 mA; VCE = 2 V; see Fig.3

100

collector capacitance

IE =ie = 0; VCB = 2 V; f = 1 MHz

−

1.4

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

2.2

−

Cre

feedback capacitance

IC = 0; VCB = 2 V; f = 1 MHz;

see Fig.4

−

340

−

transition frequency

IC = 80 mA; VCE = 2 V; f = 2 GHz;

Tamb =25 °C; see Fig.5

−

GHz

Gmax

maximum power gain; note 1

IC = 80 mA; VCE = 2 V; f = 2 GHz;

Tamb =25 °C; see Figs 7 and 8

−

insertion power gain

IC = 80 mA; VCE = 2 V; f = 2 GHz;

Tamb =25 °C; see Fig.8

−

noise ﬁgure

IC = 8 mA; VCE = 2 V; f = 900 MHz;

ΓS = Γopt; see Fig.13

−

1.2

−

IC = 8 mA; VCE = 2 V; f = 2 GHz;

ΓS = Γopt; see Fig.13

−

1.8

−

PL1

output power at 1 dB gain

compression

Class-AB;

δ < 1 : 2; tp = 5 ms;

VCE = 3.6 V; ICQ = 1 mA; f = 2 GHz

−

dBm

ITO

third order intercept point

IC = 80 mA; VCE = 2 V; f = 2 GHz;

ZS =ZS opt; ZL =ZL opt; note 2

−

dBm

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