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CYUSB3015 Datasheet(PDF) 13 Page - Infineon Technologies AG |
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CYUSB3015 Datasheet(HTML) 13 Page - Infineon Technologies AG |
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13 / 39 page ![]() Document Number: 002-30704 Rev. *C Page 12 of 38 CYUSB3015 CYUSB3016 CYUSB3017 Digital I/Os SX3 has internal firmware-controlled pull-up and pull-down resistors on all digital I/O pins. An internal 50-k resistor pulls the pins high, while an internal 10-k resistor pulls the pins low to prevent them from floating. The I/O pins may have the following states: ■ Tristated (High-Z) ■ Weak pull-up (via internal 50 k) ■ Pull-down (via internal 10 k) ■ Hold (I/O hold its value) when in low-power modes All unused I/Os should be pulled high by using the internal pull-up resistors. All unused outputs should be left floating. All I/Os can be driven at full-strength, three-quarter strength, half-strength, or quarter-strength. These drive strengths are configured separately for each interface. GPIOs SX3 supports seven GPIOs. They can be configured to one of the pre-defined Input or Output function using the SX3 Configuration utility. All general configurable interface pins and GPIO pins support an external load of up to 16 pF for every pin. EMI SX3 meets EMI requirements outlined by FCC 15B (USA) and EN55022 (Europe) for consumer electronics. SX3 can tolerate EMI, conducted by the aggressor, outlined by these specifica- tions and continue to function as expected. System-level ESD SX3 has built-in electrostatic discharge (ESD) protection on the D+, D–, and GND pins on the USB interface. The ESD protection levels provided on these ports are: ■ ±2.2-kV human body model (HBM) based on JESD22-A114 Specification. ■ ±6-kV contact discharge and ±8-kV air gap discharge based on IEC61000-4-2 level 3A. ■ ± 8-kV Contact Discharge and ±15-kV Air Gap Discharge based on IEC61000-4-2 level 4C. This protection ensures the device continues to function after ESD events up to the levels stated in this section. The SSRX+, SSRX–, SSTX+, and SSTX– pins only have up to ±2.2-kV HBM internal ESD protection. |
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