BFR93AT datasheet(2/16 Pages) PHILIPS

2 / 16 page

2000 Mar 09

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR93AT

FEATURES

• High power gain

• Gold metallization ensures

excellent reliability

• SOT416 (SC-75) package.

APPLICATIONS

Designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT416 (SC-75) package.

The BFR93AT uses the same die as

the SOT23 version: BFR93A.

PINNING

DESCRIPTION

base

emitter

collector

fpage

MBK090

Top view

Marking code: R2.

Fig.1 SOT416.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

Ptot

total power dissipation

Ts ≤ 75 °C; note 1

−−

150

hFE

DC current gain

IC = 30 mA; VCE =5V

−

Cre

feedback capacitance

IC = 0; VCE = 5 V; f = 1 MHz;

Tamb =25 °C

−

0.6

−

transition frequency

IC = 30 mA; VCE = 5 V; f = 500 MHz

−

GHz

GUM

maximum unilateral power gain

IC = 30 mA; VCE =8V; Tamb =25 °C;

f = 1 GHz

−

f = 2 GHz

−

noise ﬁgure

IC = 5 mA; VCE = 8 V; f = 1 GHz;

Γs = Γopt

−

1.5

−

junction temperature

−−

150

°C

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