BFR93AT datasheet(4/16 Pages) PHILIPS

4 / 16 page

2000 Mar 09

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR93AT

CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =5V

−−

hFE

DC current gain

IC = 30 mA; VCE =5V

−

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

0.7

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

2.3

−

Cre

feedback capacitance

IC = 0; VCE = 5 V; f = 1 MHz

−

0.6

−

transition frequency

IC = 30 mA; VCE = 5 V; f = 500 MHz

−

GHz

GUM

maximum unilateral power

gain

IC = 30 mA; VCE =8V; Tamb =25 °C;

note 1;

f = 1 GHz

−

f = 2 GHz

−

noise ﬁgure

IC = 5 mA; VCE =8V; Γs = Γopt;

f = 1 GHz

−

1.5

−

f = 2 GHz

−

2.1

−

–

() 1 S

–

()

----------------------------------------------------------- dB

log

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