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BFR93AT Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFR93AT Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page ![]() 2000 Mar 09 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 35 mA Ptot total power dissipation Ts ≤ 75 °C; see Fig.2 − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 500 K/W 0 50 100 200 100 0 MGU068 150 Ptot (mW) Ts (°C) 150 200 50 Fig.2 Power derating curve. |
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